TIP125 discrete semiconductors r dc components co., ltd. technical specifications of pnp darlington transistor description designed for use in general purpose amplifier and low speed switching applications. pinning 1 = base 2 = collector 3 = emitter to-220ab dimensions in inches and (millimeters) .625(15.87).570(14.48) .562(14.27).500(12.70) .055(1.39).045(1.15) .185(4.70).173(4.40) .405(10.28) .380(9.66) .295(7.49).220(5.58) .350(8.90).330(8.38) .640 (16.25) typ .055(1.40).045(1.14) .037(0.95).030(0.75) .100 (2.54) typ .024(0.60).014(0.35) f.151 f(3.83) typ 1 2 3 characteristic symbol rating unit collector-base voltage vcbo -60 v collector-emitter voltage vceo -60 v emitter-base voltage vebo -5 v collector current ic -5 a total power dissipation pd 2 w total power dissipation(t c=25oc) pd 65 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -60 - - v ic=-1ma collector-emitter breakdown voltage bvceo -60 - - v ic=-100ma collector cutoff current icbo - - -0.2 ma vcb=-60v iceo - - -0.5 ma vce =-30v emitter cutoff current iebo - - -2 ma veb =-5v collector-emitter saturation voltage (1) vce(sat)1 - - -2 v ic=-3a, ib=-12ma vce(sat)2 - - -4 v ic=-5a, ib=-20ma base-emitter on voltage (1) vbe(on) - - -2.5 v ic=-3a, vce=-3v dc current gain(1) hfe1 1k - - - ic=-500ma, vce=-3v hfe2 1k - - - ic=-3a, vce=-3v output capacitance cob - - 300 pf vcb =-10v, f=0.1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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